سال انتشار: ۱۳۸۸

محل انتشار: سومین کنفرانس نانوساختارها

تعداد صفحات: ۴

نویسنده(ها):

B Abdollahi nejand – Nanomaterials Group, Dept. of Materials
S Sanjabi – Nanomaterials Group, Dept. of Materials
V Ahmadi – Dept. of Electrical and Computer Engineering,

چکیده:

Nitrogen doped TiO2 thin film was deposited by a DC reactive magnetron sputtering on glass and SiO substrate and then annealed at 400° C. Deposition was performed at Ar +O2+N2 gas mixture with a pressure of 1.0 Pa and oxygen and nitrogen with a constant pressure of 0.2 Pa and 0.1 Pa, respectively. The pure TiO2 thin film was deposited at Ar+O2 gas mixture with a pressure of 1.0 Pa andoxygen with a constant pressure of 0.2 Pa. ZnO thin layer was used as a buffer layer. The thicknesses of layers TiO2-x)Nx /TiO2/ZnO were approximately 200nm, 800nm, and 80
nm, respectively. The structure and the morphology of deposited films were evaluated by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The average grain size of TiO2 nanocrystals was in the range of 25-30 nm in the annealed fabricated thin films. The microstructure of annealed films was anatase. The transmittance of the films was measured using ultraviolet–visible light ( UV–vis) pectrophotometer.Photocatalytic activity of the samples was evaluated by the degradation of Methylene Blue (MB) dye.